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Top 10 Developments in China's Third Generation Semiconductor Technology for 2024 Released
On November 19, 2024, the 10th International Third Generation Semiconductor Forum and the 21st China International Semiconductor Lighting Forum (IFWS&SSSLCHINA2024) grandly opened in Suzhou. Led by academicians, over a thousand representatives from various links of the industry chain attended the opening ceremony. At the opening ceremony, a series of activities were held, and the top ten developments in China's third-generation semiconductor technology for 2024 were officially announced, attracting much attention.
Wu Ling, Chairman of the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance and member of the National New Materials Industry Development Expert Advisory Committee, released the top ten developments in China's third-generation semiconductor technology for 2024.
In 2024, China's third-generation semiconductor technology and industry are developing rapidly. In the rapidly changing tide, in order to better grasp the forefront of the industry, highlight influential and breakthrough progress, provide a clear perspective for industry development, and stimulate more innovation, the conference program committee proposes to launch the selection of the top ten advances in China's third-generation semiconductor technology in 2024. As of November 10th, a total of 39 candidate technologies have been received through self recommendation, recommendation, and public information sorting. After voting and comprehensive evaluation by the program committee, 10 technological advances have been finally determined.
The rapid development of third-generation semiconductor technology and industry has also brought golden opportunities to the industry. Technological breakthroughs will bring high-performance products, and industrial development will stimulate a large number of collaborations, helping to explore more emerging markets.
Attachment:
Top 10 Developments in China's Third Generation Semiconductor Technology for 2024
(Ranked in no particular order)
1. Significant breakthrough in 6-8 inch sapphire based gallium nitride medium to high voltage power electronic device technology
2. Wafer level fabrication of vertically injected aluminum gallium nitride based deep ultraviolet light-emitting devices
3. Full color display technology based on indium gallium nitride red light Micro LED chip
4. High power density, high energy efficiency ratio deep ultraviolet Micro LED display chip
5. Atomic scale visualization of local vibrations caused by gallium nitride defects
6. Kilovolt level gallium oxide vertical groove gate transistor
7. Localization of 2-inch Single Crystal Diamond Heteroepitaxial Self Supporting Substrate
8. 8-inch silicon carbide material and wafer manufacturing achieve industrialization breakthrough
9. Domestic automotive grade silicon carbide MOSFET devices realize the application of electric drive in new energy vehicles
10. Key technology of gallium nitride based blue laser achieves industrialization breakthrough
