Electronic Grade Single Crystal Diamond Semiconductor
01.Single Crystal Diamond Substrate
Standard Specifications
Face Orientation :
{100}
Size(LengthXWidth):
1mm×1mm-20mm×20mm
Thickness :
0.2mm-3mm
Thickness Tolerance :
±0.05mm
Roughness :
Regular（Ra≤5nm）；Fine（Ra≤1nm）
Impurities :
N≤5ppm；B & Si below SIMS resolution
XRD FWHM :
100arcsec；60arcsec；40arcsec（Optional）
XRD offset :
＜3°
Dislocation Density :
＜10^5/cm
Thermal Conductivity :
＞2000 W/m·K
Customizable Parameters
1
Face Orientation111，Size≤5mm≤5mm
2
Laser cutting crystal orientation offset and shapes
3
Large size≤2 inch
02.Mosaic Single Crystal Diamond Substrate
Standard Specifications
Joint Method :
Joint from 4 single crystal substrates that each size is 10mmx10mm
Face Orientation :
{100}
Size(LengthXWidth) :
1mm×1mm-20mm×20mm
Thickness :
0.5mm-2mm
Thickness Tolerance :
±0.05mm
Laser Kerf :
＜0.5°
Roughness :
Regular（Ra ≤5nm）；Fine（Ra ≤1nm）
03.Epi-layer on Single Crystal Diamond Substrates
Standard Specifications
Hydrogen-terminated Single Crystal Diamond(H-diamond)
Size :
1mm×1mm-20mm×20mm
Roughness :
Ra＜2nm
Oxygen-terminated Single Crystal Diamond(O-diamond)
Size :
1mm×1mm-20mm×20mm
Roughness :
Ra＜1nm
Boron-doping Single Crystal Diamond(B-diamond)
Boron density :
2X10^16-1X10^17/cm3
Thickness :
Open to discussion
Mobility :
＞1500 cm2/V·s
Should you have any specific requirements for electronic-grade single crystal diamond substrates, please contact us. We will customize the suitable electronic-grade single crystal diamond substrate based on your inquiries. Common products are listed in the table below：
